We report on an all-electrical measurement of the spin Hall effect inepitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si)and highly doped Schottky tunnel barriers. A transverse spin current generatedby an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected bymeasuring the spin accumulation at the edges of the channel. The spinaccumulation is identified through the observation of a Hanle effect in theHall voltage measured by pairs of ferromagnetic contacts. We investigate thebias and temperature dependence of the resulting Hanle signal and determine theskew and side-jump contributions to the total spin Hall conductivity.
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